The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Apr. 15, 2016
Applicant:
Ucl Business Plc, London, GB;
Inventors:
Assignee:
UCL Business PLC, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/34 (2006.01); H01S 5/02 (2006.01); H01S 5/30 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01); H01L 21/02 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01S 5/3412 (2013.01); B82Y 20/00 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02463 (2013.01); H01L 21/02507 (2013.01); H01L 21/02538 (2013.01); H01L 21/02549 (2013.01); H01L 21/02661 (2013.01); H01S 5/02 (2013.01); H01S 5/021 (2013.01); H01S 5/2018 (2013.01); H01S 5/3013 (2013.01); H01S 5/34 (2013.01); H01S 5/343 (2013.01); H01S 5/3403 (2013.01); H01S 5/3406 (2013.01); H01S 5/34313 (2013.01);
Abstract
A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.