The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jul. 06, 2016
Applicant:
Si-ware Systems, Cairo, EG;
Inventors:
Yasser M. Sabry, Nasr, EG;
Diaa Khalil, Cairo, EG;
Tarik E. Bourouina, Joinville, FR;
Momen Anwar, Cairo, EG;
Assignee:
SI-WARE SYSTEMS, Cairo, EG;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/00 (2006.01); G01J 3/02 (2006.01); G01J 3/10 (2006.01); G01J 3/26 (2006.01); G01J 3/42 (2006.01); H01K 1/04 (2006.01); H01K 1/14 (2006.01);
U.S. Cl.
CPC ...
H01L 49/00 (2013.01); G01J 3/0205 (2013.01); G01J 3/0208 (2013.01); G01J 3/0216 (2013.01); G01J 3/0237 (2013.01); G01J 3/0245 (2013.01); G01J 3/108 (2013.01); G01J 3/26 (2013.01); G01J 3/42 (2013.01); H01K 1/04 (2013.01); H01K 1/14 (2013.01);
Abstract
An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.