The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Sep. 04, 2015
Applicant:
Mossey Creek Technologies Inc., Jefferson City, TN (US);
Inventor:
John Carberry, Talbott, TN (US);
Assignee:
Mossey Creek Technologies, Inc., Jefferson City, TN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/22 (2006.01); H01L 35/16 (2006.01); H01L 35/20 (2006.01); H01L 35/34 (2006.01); C04B 35/64 (2006.01); C04B 35/65 (2006.01); C04B 35/626 (2006.01);
U.S. Cl.
CPC ...
H01L 35/22 (2013.01); C04B 35/6261 (2013.01); C04B 35/64 (2013.01); C04B 35/65 (2013.01); H01L 35/16 (2013.01); H01L 35/20 (2013.01); H01L 35/34 (2013.01);
Abstract
Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material.