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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793455 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

May. 04, 2016

Semiconductor light-emitting device

Applicant:

Stanley Electric Co., Ltd., Tokyo, JP;

Inventor:

Kosaburo Ito, Tokyo, JP;

Assignee:

STANLEY ELECTRIC CO., LTD., Tokyo, JP;

Attorney:

Kenealy Vaidya LLP

Primary Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01); H01L 33/44 (2010.01); H01L 25/075 (2006.01); B60Q 1/00 (2006.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01); F21Y 105/12 (2016.01); F21Y 105/10 (2016.01); F21Y 103/10 (2016.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/0075 (2013.01); H01L 33/44 (2013.01); H01L 33/502 (2013.01); H01L 33/505 (2013.01); H01L 33/58 (2013.01); B60Q 1/0088 (2013.01); F21Y 2103/10 (2016.08); F21Y 2105/10 (2016.08); F21Y 2105/12 (2016.08); H01L 25/0753 (2013.01); H01L 27/156 (2013.01); H01L 33/62 (2013.01); H01L 2224/16225 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A semiconductor light-emitting device can include a wavelength converting layer including a surrounding portion, which covers at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a substrate, a frame located on the substrate, the chip mounted on the substrate, a transparent material layer located on the wavelength converting layer so as to reduce from the wavelength converting layer toward a light-emitting surface thereof, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a color variation by using the surrounding portion and an inclined side surface of transparent material layer, and therefore can emit various colored lights including white light having a high light-emitting efficiency from a small light-emitting surface.

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