The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Apr. 13, 2015
Applicant:

Pacific Light Technologies Corp., Portland, OR (US);

Inventors:

Juanita Kurtin, Hillsboro, OR (US);

Brian Theobald, Beaverton, OR (US);

Matthew J. Carillo, Portland, OR (US);

Oun-Ho Park, San Jose, CA (US);

Georgeta Masson, Lafayette, CA (US);

Steven M. Hughes, Walla Walla, WA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); C01B 19/00 (2006.01); B82Y 30/00 (2011.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/56 (2010.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); B82Y 30/00 (2013.01); C01B 19/007 (2013.01); C09K 11/02 (2013.01); C09K 11/025 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H01L 33/005 (2013.01); H01L 33/06 (2013.01); H01L 33/56 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2002/84 (2013.01); C01P 2004/04 (2013.01); C01P 2004/10 (2013.01); C01P 2004/54 (2013.01); C01P 2004/64 (2013.01); C01P 2004/80 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0083 (2013.01); Y10S 977/744 (2013.01); Y10S 977/774 (2013.01); Y10S 977/824 (2013.01); Y10S 977/89 (2013.01); Y10S 977/95 (2013.01);
Abstract

Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.


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