The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Dec. 30, 2015
Applicant:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Inventors:

Alexander Lunev, Columbia, SC (US);

Maxim S. Shatalov, Columbia, SC (US);

Alexander Dobrinsky, Loudonville, NY (US);

Michael Shur, Latham, NY (US);

Remigijus Gaska, Columbia, SC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 31/00 (2006.01); H01L 33/14 (2010.01); H01L 33/24 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 31/00 (2013.01); H01L 33/002 (2013.01); H01L 33/14 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/405 (2013.01);
Abstract

A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.


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