The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Oct. 07, 2016
Applicant:

Rayvio Corporation, Hayward, CA (US);

Inventors:

Yitao Liao, Hayward, CA (US);

Robert Walker, Hayward, CA (US);

Doug Collins, Hayward, CA (US);

Assignee:

RAYVIO CORPORATION, Hayward, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/18 (2010.01); H01L 21/02 (2006.01); C23C 14/06 (2006.01); C23C 14/00 (2006.01); C23C 16/18 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); C23C 14/56 (2006.01); C23C 16/30 (2006.01); C23C 16/48 (2006.01); C23C 16/54 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); C23C 14/0036 (2013.01); C23C 14/0617 (2013.01); C23C 14/0641 (2013.01); C23C 14/568 (2013.01); C23C 16/18 (2013.01); C23C 16/303 (2013.01); C23C 16/481 (2013.01); C23C 16/54 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0062 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.


Find Patent Forward Citations

Loading…