The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Oct. 14, 2015
Applicant:
Ford Global Technologies, Llc, Dearborn, MI (US);
Inventor:
Ming Su, Canton, MI (US);
Assignee:
Ford Global Technologies, LLC, Dearborn, MI (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 27/082 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/7395 (2013.01);
Abstract
A power semiconductor device is comprised of a plurality of zones having similar structure. Each of the zones may be characterized by a switching loss during transitions to a non-conducting state. The device is configured such that the switching loss is different between at least two of the zones. Further, the device is configured such that zones having greater switching losses transition to the non-conducting state before zones having lesser switching losses.