The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
May. 26, 2015
Applicant:
Delta Electronics, Inc., Taoyuan, TW;
Inventor:
Wen-Chia Liao, Taoyuan, TW;
Assignee:
DELTA ELECTRONICS, INC., Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/51 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 21/283 (2006.01); H01L 21/20 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/02241 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/28264 (2013.01); H01L 21/31105 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4236 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device includes a substrate, a channel layer, a spacer layer, a barrier layer, and an oxidized cap layer. The channel layer is disposed on or above the substrate. The spacer layer is disposed on the channel layer. The barrier layer is disposed on the spacer layer. The oxidized cap layer is disposed on the barrier layer. The oxidized cap layer is made of oxynitride.