The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Aug. 27, 2015
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-ken, JP;
Abstract
The present invention provides a MIS-type semiconductor device having a ZrONgate insulating film in which threshold voltage shift is suppressed, thereby achieving stable operation. In the MIS-type semiconductor device having a gate insulating film on the semiconductor layer and a gate electrode on the gate insulating film, with a gate applied voltage of 5 V or more, the gate insulating film is formed of ZrON(x and y satisfy the relation: x>0, y>0, 0.8≦y/x≦10, and 0.8≦0.59x+y≦1.0). The MIS-type semiconductor device having such a gate insulating film can perform stable operation because there is no shift in the threshold voltage even if a high voltage is applied to the gate electrode.