The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Dec. 17, 2014
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Qinghui Zeng, Beijing, CN;

Zhuo Zhang, Beijing, CN;

Seiji Fujino, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/38 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/0665 (2013.01); H01L 29/0847 (2013.01); H01L 29/22 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor, an array substrate and a display device are disclosed, the thin film transistor comprises a gate electrode, an active layer located on the gate electrode, and a source electrode and a drain electrode respectively located at opposite sides of the active layer and both partially overlapped with the active layer; the active layer includes at least one first structure part and at least one second structure part, a material for the first structure part is semiconductor, and a material for the second structure part is predetermined conductor, and the predetermined conductor has better conductivity than the conductivity of the conducted semiconductor, and in response to that a turn-on voltage is applied to the gate electrode, a conductive passage located between the source electrode and the drain electrode includes the first structure part and the second structure part.


Find Patent Forward Citations

Loading…