The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
May. 15, 2012
Applicants:
Euijoon Yoon, Seoul, KR;
Shin-woo Ha, Seoul, KR;
Inventors:
Euijoon Yoon, Seoul, KR;
Shin-Woo Ha, Seoul, KR;
Assignee:
HEXASOLUTION CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/02658 (2013.01); H01L 21/02664 (2013.01); H01L 29/0657 (2013.01); H01L 33/0079 (2013.01);
Abstract
A method of forming a semiconductor thin film structure and a semiconductor thin film structure formed using the same is provided. A sacrificial layer is formed on a substrate and then patterned through various methods, an inorganic thin film is formed on the sacrificial layer and then the sacrificial layer is selectively removed to form a cavity defined by the substrate and the inorganic thin film on the substrate.