The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Mar. 15, 2016
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Kohei Morizuka, Himeji Hyogo, JP;
Yoichi Hori, Himeji Hyogo, JP;
Atsuko Yamashita, Himeji Hyogo, JP;
Tomohiro Nitta, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes first, second, third, and fourth electrodes, a first insulating film, and first, second third, and fourth silicon carbide layers. A first distance between the first electrode and a first interface between the fourth electrode and fourth silicon carbide region is longer than a second distance between the first insulating film and a second interface between the third silicon carbide region and the fourth silicon carbide region. The fourth silicon carbide region is between the third silicon carbide region and the second silicon carbide region in a direction perendicular to the second interface.