The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Nov. 21, 2013
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/36 (2006.01); H01L 29/872 (2006.01); H01L 33/22 (2010.01); H01L 33/26 (2010.01); H01L 33/34 (2010.01); H01L 21/02 (2006.01); H01L 33/02 (2010.01); H01L 29/24 (2006.01); H01L 29/34 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02521 (2013.01); H01L 21/02529 (2013.01); H01L 29/24 (2013.01); H01L 29/34 (2013.01); H01L 29/36 (2013.01); H01L 29/872 (2013.01); H01L 33/0033 (2013.01); H01L 33/025 (2013.01); H01L 33/22 (2013.01); H01L 33/26 (2013.01); H01L 33/34 (2013.01);
Abstract
An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.