The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Nov. 19, 2015
Applicant:
Nxp B.v., Eindhoven, NL;
Inventor:
Jan Sonsky, Louvain, BE;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/76264 (2013.01); H01L 21/76283 (2013.01); H01L 27/1207 (2013.01); H01L 29/267 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming trench isolation structures, exposing some of the trench isolation structuresto leave othersmasked, and then selectively etching a buried layer to form a cavityunder an active device region. The active device regionis supported by support regions in the exposed trenches. The buried layer may be a SiGe layer on a Si substrate.