The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Mar. 25, 2015
Applicant:

Ipdia, Caen, FR;

Inventors:

Frédéric Voiron, Barraux, FR;

Jean-René Tenailleau, Hottot-les-Bagues, FR;

Assignee:

IPDIA, Caen, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 29/66 (2006.01); H01L 25/07 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 25/074 (2013.01); H01L 28/65 (2013.01); H01L 28/75 (2013.01); H01L 29/66181 (2013.01); H01L 29/945 (2013.01); H01L 2224/16145 (2013.01);
Abstract

The invention relates to a capacitor structure () comprising a silicon substrate () with first and second sides (), a double double Metal Insulator Metal trench capacitor () including a basis electrode (), an insulator layer (), a second and a third conductive layers (); and comprising a second pad () and a fourth pad () coupled to the basis electrode (), a first pad () and a third pad () coupled together, the first pad () being located on the same substrate side than the second pad (), the third pad () being located on the same substrate side than the fourth pad (), the third pad () being coupled to the second conductive layer (), said second conductive layer () being flush with or protruding from the opposite second side ().


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