The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jul. 16, 2010
Tsui Ping Chu, Kuching, MY;
Peng Yang, Kuching, MY;
Evie Siaw Hei Kho, Kuching, MY;
Yong Kheng Ang, Kuching, MY;
Swee Hua Tia, Kuching, MY;
Tsui Ping Chu, Kuching, MY;
Peng Yang, Kuching, MY;
Evie Siaw Hei Kho, Kuching, MY;
Yong Kheng Ang, Kuching, MY;
Swee Hua Tia, Kuching, MY;
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Abstract
A semiconductor device comprising a semiconductor substrate and a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises a capacitor stack comprising a lower and an upper capacitor, respectively comprising first and second dielectric materials, wherein the first and second dielectric materials are different materials and/or have different thicknesses from each other. This can minimize the voltage dependence of the capacitance of the composite capacitor structure. It is also possible to provide a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises at least a first and a second capacitor stack, each comprising a lower and an upper capacitor. The capacitors can be MIM capacitors.