The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
May. 27, 2016
Applicant:
Mediatek Inc., Hsin-Chu, TW;
Inventors:
Yuan-Fu Chung, Fuxing Township, Changhua County, TW;
Chu-Wei Hu, Zhubei, TW;
Yuan-Hung Chung, Zhubei, TW;
Assignee:
MEDIATEK INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 49/02 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 27/06 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01); H01L 29/167 (2006.01); H01L 21/3215 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/265 (2013.01); H01L 21/266 (2013.01); H01L 21/268 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/28035 (2013.01); H01L 21/324 (2013.01); H01L 21/32155 (2013.01); H01L 21/76224 (2013.01); H01L 21/8234 (2013.01); H01L 21/823437 (2013.01); H01L 27/0629 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/167 (2013.01); H01L 29/4916 (2013.01); H01L 27/0207 (2013.01);
Abstract
An integrated circuit includes a first polysilicon region having a first grain size formed on a substrate. The integrated circuit also includes a second polysilicon region, having a second grain size different from the first grain size, formed on the substrate. The first polysilicon region is doped with a first dopant of a first conductive type and a second dopant selected from elements of group IIIA and group IVA which has an atomic weight heavier than that of silicon.