The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jun. 19, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Xiaolin Wang, Beijing, CN;
Xing Yao, Beijing, CN;
Yoonsung Um, Beijing, CN;
Seungwoo Han, Beijing, CN;
Yunsik Im, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.