The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jun. 01, 2016
International Business Machines Corporation, Armonk, NY (US);
Renesas Electronics Corporation, Kanagawa, JP;
Dechao Guo, Niskayuna, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
Andreas Scholze, Colchester, VT (US);
Chun-Chen Yeh, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device including a gate structure on a channel region portion of a fin structure, and at least one of an epitaxial source region and an epitaxial drain region on a source region portion and a drain region portion of the fin structure. At least one of the epitaxial source region portion and the epitaxial drain region portion include a first concentration doped portion adjacent to the fin structure, and a second concentration doped portion on the first concentration doped portion. The second concentration portion has a greater dopant concentration than the first concentration doped portion. An extension dopant region extending into the channel portion of the fin structure having an abrupt dopant concentration gradient of n-type or p-type dopants of 7 nm per decade or greater.