The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Apr. 26, 2016
Applicant:

Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;

Inventor:

Yukimasa Minami, Chiba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/5258 (2013.01); H01L 29/0649 (2013.01); H01L 23/53271 (2013.01);
Abstract

A semiconductor integratd circuit device includes fuse elements formed on an element isolation insulating film, and an insulating film, an interlayer insulating film and a silicon nitride film successively formed over the fuse elements. An opening region extends through the silicon nitride film into the interlayer insulating film above the fuse elements, and openings formed in the interlayer insulating film are positioned on both sides of middle portions of the fuse elements. The openings facilitate blowing off of the insulating film during laser cutting of the fuse elements, reducing physical damage to the element isolation insulating film under the fuse elements.


Find Patent Forward Citations

Minami, Yukimasa. (2017). Semiconductor integrated circuit device (U.S. Patent No. 9793215). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9793215

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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