The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jun. 21, 2016
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Jae Hwan Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 27/0207 (2013.01);
Abstract

A power line layout structure of a semiconductor device and a method for forming the same are disclosed. The power line layout structure of the semiconductor device includes a first block region including a plurality of first and second power lines, a second block region including a plurality of first and second power lines spaced apart from the first block region by a predetermined distance. Further, a first connection pattern arranged in a boundary region between the first and second block region, and formed to interconnect the first power line of the first block region and the first power line of the second block region. Still further, a second connection pattern arranged in a boundary region between the first and second block regions, and formed to interconnect the first and second block region power lines, wherein the first and second connection patterns are formed over different layers.


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