The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jun. 07, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Huy Cao, Rexford, NY (US);

Huang Liu, Mechanicville, NY (US);

Guillaume Bouche, Albany, NY (US);

Songkram Srivathanakul, Waterford, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0214 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/3115 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract

One method disclosed herein includes, among other things, forming a process layer on a substrate, forming a carbon-containing silicon dioxide layer above the process layer and forming a patterned mask layer above the carbon-containing silicon dioxide layer. The patterned mask layer exposes portions of the carbon-containing silicon dioxide layer. A material modification process is performed on the exposed portions of the carbon-containing silicon dioxide layer to generate modified portions, and the modified portions are removed. The process layer is etched using remaining portions of the carbon-containing silicon dioxide layer as an etch mask.


Find Patent Forward Citations

Loading…