The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jan. 06, 2012
Applicants:

Seyoung Jeong, Suwon-si, KR;

Taeje Cho, Hwaseong-si, KR;

Hogeon Song, Suwon-Si, KR;

Kyu-ha Lee, Yongin-si, KR;

Inventors:

Seyoung Jeong, Suwon-si, KR;

Taeje Cho, Hwaseong-si, KR;

Hogeon Song, Suwon-Si, KR;

Kyu-Ha Lee, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/683 (2006.01); H01L 25/065 (2006.01); H01L 25/10 (2006.01); H01L 23/14 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/486 (2013.01); H01L 21/6835 (2013.01); H01L 23/147 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 23/49827 (2013.01); H01L 24/73 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 23/3128 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/48 (2013.01); H01L 24/81 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68331 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05109 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/48157 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73257 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81815 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/157 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method of fabricating a semiconductor device is provided. The method may include preparing a substrate having a first surface and a second surface, forming a via hole exposing at least a portion of the substrate from the first surface of the substrate, forming a first insulating film on an inner wall of the via hole, forming a conductive connection part filling an inside of the via hole including the first insulating film, polishing the second surface of the substrate until the conductive connection part is exposed, and selectively forming a second insulating film on the second surface of the substrate using an electrografting method to expose the conductive connection part.


Find Patent Forward Citations

Loading…