The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Oct. 20, 2015
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Claire Fenouillet-Beranger, Voiron, FR;
Philippe Coronel, Barraux, FR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 21/7688 (2013.01); H01L 21/76801 (2013.01); H01L 21/76816 (2013.01); H01L 21/76879 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 21/28518 (2013.01); H01L 21/7682 (2013.01); H01L 21/823475 (2013.01);
Abstract
Method for producing one or more connection elements for integrated circuit including the formation of sacrificial elements passing through a porous layer formed between two superimposed levels of transistors, then the removal of the sacrificial elements through the porous layer and their replacement by a conductor material before or after having produced a higher level transistor.