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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793155 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

Jun. 09, 2015

Method of fabricating flash memory device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ho-Jun Seong, Suwon-si, KR;

Jee-hoon Han, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Jami M Valentine

Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11531 (2017.01); H01L 21/033 (2006.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 21/768 (2013.01); H01L 21/0337 (2013.01); H01L 21/28273 (2013.01); H01L 21/32139 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11531 (2013.01); H01L 21/28282 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01);
Abstract

A method of fabricating a memory device includes forming an etching object layer and a lower sacrificial layer on a substrate, and forming an upper sacrificial pattern structure on the lower sacrificial layer. The upper sacrificial pattern structure includes a pad portion and a line portion on the lower sacrificial layer. An upper spacer is formed by covering a side wall of the upper sacrificial pattern structure. A lower sacrificial pattern structure including a lower sacrificial pad portion and a lower sacrificial line portion is formed by etching the lower sacrificial layer, by using the upper sacrificial pad portion and the upper spacer as a mask. A lower spacer layer is formed by covering the lower sacrificial pattern structure. A lower mask pattern including at least one line mask, bridge mask, and pad mask, is formed by etching the lower spacer layer and the lower sacrificial pattern structure.

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