The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Feb. 27, 2015
Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

Hideaki Tsuchiko, San Jose, CA (US);

Sik Lui, Sunnyvale, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 21/266 (2006.01); H01L 29/732 (2006.01); H01L 29/808 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 21/266 (2013.01); H01L 29/0619 (2013.01); H01L 29/0646 (2013.01);
Abstract

Aspects of the present disclosure provides a device comprising a P-type semiconductor substrate, an N-type tub above the semiconductor substrate, a P-type region provided in the N-type tub isolated by one or more P-type isolation structures, and an N-type punch-through stopper provided under the P-type regions isolated by the isolation structure(s). The punch-through stopper is heavily doped compared to the N-type tub. The P-type region has a width between the two isolation structures that is equal to or less than that of the N-type punch-through stopper.


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