The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Oct. 08, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Inventors:
Chan-Won Kim, Seoul, KR;
Jung-Woo Seo, Hwaseong-si, KR;
Kee-Hong Lee, Seongnam-si, KR;
Kyoung-Ryul Yoon, Yongin-si, KR;
Seong-Kyu Yun, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/311 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10852 (2013.01); H01L 28/90 (2013.01); H01L 21/31116 (2013.01);
Abstract
Methods of forming a semiconductor device can be provided by forming a first molding layer on a substrate and forming a first hole through the first molding layer. A second molding layer can be formed on the first molding layer so that the first hole is retained in the first molding layer and a second hole can be formed through the second molding layer to connect with the first hole. A capacitor electrode can be formed in the first and second holes.