The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Nov. 07, 2013
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Nobuaki Hokazono, Kanagawa, JP;

Junichi Yamashita, Tokyo, JP;

Yusuke Onoyama, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05B 33/00 (2006.01); H05B 33/08 (2006.01); G09G 3/3291 (2016.01); G09G 3/3233 (2016.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3291 (2013.01); G09G 3/3233 (2013.01); H01L 27/3262 (2013.01); G09G 2320/045 (2013.01);
Abstract

A light-emitting element includes a light-emitting section and a driving circuit that drives the light-emitting section. The driving circuit includes at least (A) a drive transistor that is a p-channel field effect transistor, (B) an image-signal writing transistor that is a p-channel field effect transistor, (C) a light-emission control transistor that is a p-channel field effect transistor, and (D) a capacitor. Each of the drive transistor, image-signal writing transistor, and light-emission control transistor is provided in an n-type well formed in a p-type silicon semiconductor substrate. A first source/drain region of the drive transistor is electrically connected to the n-type well in which the drive transistor is formed.


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