The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jul. 22, 2014
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Giuseppe Bernacchia, Villach, AT;

Olivier Guillemant, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01); G05F 3/24 (2006.01); G05F 3/10 (2006.01); H02M 3/335 (2006.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
G05F 3/24 (2013.01); G05F 3/10 (2013.01); H02M 3/33576 (2013.01); H02M 3/33592 (2013.01); H03K 17/0822 (2013.01); H02M 3/33546 (2013.01); H03K 2217/0027 (2013.01); Y02B 70/1475 (2013.01);
Abstract

A power converter with an isolated topology may include a power transistor, a sense transistor, and a read-out circuit. The sense transistor may be arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor. The read-out circuit may be coupled to the second drain/source terminal of the power transistor and the second drain source/terminal of the sense transistor. The read-out circuit may be arranged to cause a voltage at the second drain/source terminal of the sense transistor to be substantially the same as a voltage at the second drain/source terminal of the power transistor.


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