The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Feb. 28, 2013
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Masanobu Nishimine, Annaka, JP;

Hirofumi Fukuoka, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/113 (2006.01); C23C 16/40 (2006.01); H01M 4/38 (2006.01); H01M 4/1395 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
C01B 33/113 (2013.01); H01M 4/386 (2013.01); H01M 4/1395 (2013.01); H01M 10/0525 (2013.01);
Abstract

A silicon oxide deposit is continuously prepared by feeding a powder feed containing silicon dioxide powder to a reaction chamber, heating the feed at 1,200-1,600° C. to produce a silicon oxide vapor, delivering the vapor to a deposition chamber through a transfer line which is maintained at or above the temperature of the reaction chamber, for thereby causing silicon oxide to deposit on a cool substrate, and removing the silicon oxide deposit from the deposition chamber. Two deposition chambers are provided, and the step of delivering the vapor is alternately switched from one to another deposition chamber.


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