The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Feb. 23, 2016
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Gyu Ho Lim, Cheongju-si, KR;

Jong Hyun Yoon, Cheongju-si, KR;

Zhi Yuan Cui, Cheongju-si, KR;

Yong Gi Ryu, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 33/08 (2006.01);
U.S. Cl.
CPC ...
H05B 33/0815 (2013.01); H05B 33/0845 (2013.01);
Abstract

A gate off delay compensation circuit includes a sensing interval determiner configured to determine an interval in which a driving voltage corresponds to a first and second level of a reference voltage as a driving voltage sensing interval, a driving voltage excess interval determiner configured to determine a driving voltage excess interval defined as an interval in which the driving voltage is larger than the reference voltage and a driving voltage period determiner configured to determine a period of the driving voltage based on the driving voltage sensing interval and the driving voltage excess interval. Therefore, a gate off delay compensation circuitdecreases an average driving current and an average driving voltage and allows decrease of a variation of a driving current according to a change of a input voltage V.


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