The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Jun. 30, 2015
Applicant:

Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;

Inventors:

Mark David Griswold, Fremont, CA (US);

Michael Hei-Lung Lau, Rockville, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04L 12/28 (2006.01); H04L 12/861 (2013.01); H04L 12/935 (2013.01); H04L 12/873 (2013.01);
U.S. Cl.
CPC ...
H04L 49/9057 (2013.01); H04L 49/3072 (2013.01); H04L 49/9042 (2013.01); H04L 47/52 (2013.01);
Abstract

Continuing to integrate more aggregate bandwidth and higher radix into switch devices is an economic imperative because it creates value both for the supplier and customer in large data center environments which are an increasingly important part of the marketplace. While new silicon processes continue to shrink transistor and other chip feature dimensions, process technology cannot be relied upon as a key driver of power reduction. Transitioning from 28 nm to 16 nm is a special case where FinFET provides additional power scaling, but subsequent FinFET nodes are not expected to deliver as substantial of power reductions to meet the desired increases in integration. The disclosed switch architecture attacks the power consumption problem by controlling the rate at which power-consuming activities occur.


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