The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Nov. 06, 2014
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Shinichi Wada, Kanagawa, JP;

Masaru Kuramoto, Kanagawa, JP;

Hideki Watanabe, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01S 5/00 (2006.01); H01S 5/343 (2006.01); H01S 5/065 (2006.01); H01S 5/042 (2006.01); H01S 5/06 (2006.01); H01S 5/14 (2006.01); H01S 5/22 (2006.01); H01S 5/028 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/0425 (2013.01); H01S 5/0602 (2013.01); H01S 5/065 (2013.01); H01S 5/141 (2013.01); H01S 5/2214 (2013.01); H01S 5/0287 (2013.01);
Abstract

A semiconductor laser element includes a stacked structure body, a second electrode, and a first electrode; a ridge stripe structureformed of at least part of the stacked structure body is formed; a side structure bodyformed of the stacked structure body is formed on both sides of the ridge stripe structure; the second electrodeis separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portionB for applying an electric field to a saturable absorption region; a protection electrodeis formed on a portion adjacent to the second portionB of the second electrode of at least one side structure body; and an insulating layermade of an oxide insulating material is formed to extend from on a portion of the ridge stripe structureto on a portion of the side structure body, on which portions neither the second electrode nor the protection electrodeis formed.


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