The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Mar. 23, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Jens Müller, Regensburg, DE;

Alfred Lell, Maxhütte-Haidhof, DE;

Uwe Strauβ, Bad Abbach, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/024 (2006.01); H01S 5/022 (2006.01); H01S 5/042 (2006.01); H01S 5/323 (2006.01); H01S 5/16 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02476 (2013.01); H01S 5/0224 (2013.01); H01S 5/02469 (2013.01); H01S 5/0425 (2013.01); H01S 5/222 (2013.01); H01S 5/2226 (2013.01); H01S 5/32341 (2013.01); H01S 5/02484 (2013.01); H01S 5/168 (2013.01); H01S 5/2214 (2013.01); H01S 2301/176 (2013.01);
Abstract

A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.


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