The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Jan. 19, 2017
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Guan-Hong Li, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Yuan-Hao Jin, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
An N-type thin film transistor includes an insulating substrate, a gate electrode, an insulating layer, a first MgO layer, a semiconductor carbon nanotube layer, a second MgO layer, a functional dielectric layer, a source electrode and a drain electrode. The gate electrode is located on a surface of the insulating substrate. The insulating layer is located on the gate electrode. The first MgO layer is located on the insulating layer. The semiconductor carbon nanotube layer is located on the first MgO layer. The source electrode and the drain electrode are electrically connected to the semiconductor carbon nanotube layer, wherein the source electrode and the drain electrode are spaced from each other. The second MgO layer is located on the semiconductor carbon nanotube layer. The functional dielectric layer is located on the second MgO layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile