The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Apr. 17, 2012
Adrian Chirila, Herznach, CH;
Ayodhya Nath Tiwari, Zürich, CH;
Patrick Bloesch, Oberwil Bei Büren, CH;
Shiro Nishiwaki, Dübendorf, CH;
David Bremaud, Uetikon am See, CH;
Adrian Chirila, Herznach, CH;
Ayodhya Nath Tiwari, Zürich, CH;
Patrick Bloesch, Oberwil Bei Büren, CH;
Shiro Nishiwaki, Dübendorf, CH;
David Bremaud, Uetikon am See, CH;
Abstract
A method to fabricate thin-film photovoltaic devices including a photovoltaic Cu(In,Ga)Seor equivalent ABC absorber layer, such as an ABClayer, deposited onto a back-contact layer characterized in that the method includes at least five deposition steps, during which the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio A/B, in the third at a ratio A/Blower than the previous, in the fourth at a ratio A/Bhigher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.