IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9786804 B1

PDFFull Text
Date of Patent:
Oct. 10, 2017

Filed:

Jun. 19, 2014

Thin-film solar cell and production method for thin-film solar cell

Applicant:

Solar Frontier K.k., Tokyo, JP;

Inventors:

Yasuaki Iwata, Tokyo, JP;

Hiroki Sugimoto, Tokyo, JP;

Hideki Hakuma, Tokyo, JP;

Assignee:

Solar Frontier K.K., Tokyo, JP;

Attorney:

Morrison & Foerster LLP

Primary Examiner:

Niki Bakhtiari

Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0749 (2012.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01); H01L 31/065 (2012.01); H01L 21/02 (2006.01); C23C 14/18 (2006.01); C23C 14/58 (2006.01); C23C 28/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0749 (2013.01); C23C 14/185 (2013.01); C23C 14/5866 (2013.01); C23C 28/32 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 31/0322 (2013.01); H01L 31/03923 (2013.01); H01L 31/03928 (2013.01); H01L 31/065 (2013.01); H01L 31/18 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract

A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IVcompound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

Find Patent Forward Citations

Loading…