The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Oct. 07, 2014
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Bogdan Govoreanu, Hulshout, BE;
Christoph Adelmann, Wilsele, BE;
Leqi Zhang, Heverlee, BE;
Malgorzata Jurczak, Leuven, BE;
IMEC VZW, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Abstract
The disclosed technology generally relates to semiconductor devices and more particularly to selector devices for memory devices having a resistance switching element, particularly resistive random access memory (RRAM) devices. In one aspect, a selector device includes a first barrier structure comprising a first metal and a first semiconductor or a first low bandgap dielectric material, and a second barrier structure comprising a second metal and a second semiconductor or a second low bandgap dielectric material. The selector device additionally includes an insulator interposed between the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material. The first barrier structure, the insulator, and the second barrier structure are stacked to form a metal/semiconductor or low bandgap dielectric/insulator/semiconductor or low bandgap dielectric/metal structure.