The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Sep. 21, 2016
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A vertical fin field effect transistor (V-FinFET) is provided as follows. A T-shaped fin structure extend vertically from an upper surface of a substrate. The T-shaped fin structure includes a lower part and an upper part. The lower part is in contact with the upper surface of the substrate. The upper part of the T-shaped fin structure is vertically stacked on the lower part of the T-shaped fin structure. A gate insulating layer surrounds the lower part. A work-function-control pattern surrounds the lower part. The gate insulating layer is interposed between the work-function-control pattern and the lower part of the T-shaped fin structure. A gate electrode is disposed on a sidewall of the work-function-control pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile