The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Aug. 29, 2016
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Kohei Morizuka, Hyogo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device including a first electrode, a second electrode, and a silicon carbide layer of which at least a portion is provided between the first electrode and the second electrode, the silicon carbide layer including an n-type first silicon carbide region, a plurality of p-type second silicon carbide regions, and a plurality of n-type third silicon carbide regions. The semiconductor device further includes a plurality of first conductive layers each of which is in contact with the n-type first silicon carbide region, a number n, n being 2, 3, 4 or 5, of first gate electrodes that are provided between two adjacent first conductive layers of the plurality of first conductive layers, and extend in the first direction, and a plurality of first gate insulating layers each of which is provided between one of the n first gate electrodes and the n-type first silicon carbide region.