The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Aug. 30, 2013
Hewlett-packard Development Company, L.p., Houston, TX (US);
Ning Ge, Palo Alto, CA (US);
Leong Yap Chia, Singapore, SG;
Pin Chin Lee, Singapore, SG;
Jose Jehrome Rando, Singapore, SG;
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., Houston, TX (US);
Abstract
A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one polysilicon ring. The substrate is doped using the polysilicon layer as a mask to form doped regions in the substrate. A dielectric layer is deposited over the polysilicon layer and the substrate. The dielectric layer is etched to expose portions of the polysilicon layer. A metal layer is deposited on the dielectric layer. The metal layer, the dielectric layer, and the exposed portions of the polysilicon layer are etched such that at least a portion of each polysilicon ring is removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile