The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Feb. 16, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Edward J. Nowak, Shelburne, VT (US);

Brent A. Anderson, Jericho, VT (US);

Andreas Scholze, Colchester, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28079 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

One aspect of the disclosure provides for a method of forming a replacement gate structure. The method may include: removing a dummy gate from over a set of fins to form an opening in a dielectric layer exposing the set of fins, each fin in the set of fins being substantially separated from an adjacent fin in the set of fins via an dielectric; forming a protective cap layer within the opening over the exposed set of fins; removing a portion of the dielectric on each side of each fin in the set of fins; undercutting each fin by removing a portion of each fin in the set of fins to create a notch disposed under the protective cap layer; substantially filling each notch with an oxide; forming a gate dielectric over each fin in the set of fins; and forming a gate conductor over the gate dielectric, thereby forming the replacement gate structure.


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