The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Aug. 22, 2013
Applicant:
Ps4 Luxco S.a.r.l., Luxembourg, LU;
Inventors:
Hiromu Yamaguchi, Tokyo, JP;
Kazuaki Tonari, Tokyo, JP;
Assignee:
LONGITUDE SEMICONDUCTOR S.A.R.L., Luxembourg, LU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 21/02164 (2013.01); H01L 21/02172 (2013.01); H01L 21/02667 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28525 (2013.01); H01L 21/28568 (2013.01); H01L 21/82345 (2013.01); H01L 21/823828 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode having a metal layer, a metal oxide layer and a silicon layer containing a dopant, provided sequentially on the gate insulating film; and a transistor having a gate insulating film and a gate electrode.