The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Oct. 09, 2014
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Yong-Suk Yeo, Seongnam-si, KR;

Yi-Joon Ahn, Seoul, KR;

Jong-Mo Yeo, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 27/124 (2013.01); H01L 27/3248 (2013.01); H01L 27/3262 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01);
Abstract

A thin film transistor substrate includes a data line, a gate line, a gate electrode, a source electrode, a first drain electrode, a semiconductor layer and a second drain electrode. The data line and the gate line cross each other on a base substrate. The gate electrode is electrically connected to the gate line. The source electrode is electrically connected to the data line. The first drain electrode and the source electrode face each other. The semiconductor layer serves as a channel between the source electrode and the first drain electrode. The second drain electrode is disposed on the first drain electrode. The second drain electrode is electrically connected to the first drain electrode.


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