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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9786744 B1

PDFFull Text
Date of Patent:
Oct. 10, 2017

Filed:

Nov. 02, 2016

P-doping of group-iii-nitride buffer layer structure on a heterosubstrate

Applicant:

Azurspace Solar Power Gmbh, Heilbronn, DE;

Inventors:

Stephan Lutgen, Dresden, DE;

Saad Murad, Freital, DE;

Ashay Chitnis, Dresden, DE;

Assignee:

AZURSPACE Solar Power GmbH, Heilbronn, DE;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 31/0336 (2006.01); H01L 23/52 (2006.01); H01L 21/338 (2006.01); H01L 21/337 (2006.01); H01L 21/28 (2006.01); H01L 29/205 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01); H01L 33/00 (2010.01); H01L 29/15 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02507 (2013.01); H01L 21/02579 (2013.01); H01L 29/1075 (2013.01); H01L 29/151 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/36 (2013.01); H01L 29/778 (2013.01); H01L 29/7783 (2013.01); H01L 29/872 (2013.01); H01L 33/0025 (2013.01);
Abstract

An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

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