The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Aug. 18, 2015
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Akira Endoh, Machida, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 29/43 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/432 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7784 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract
A semiconductor device includes a semiconductor stacked structure including at least an electron transit layer and an electron supply layer over a substrate. The electron supply layer includes a first portion and second portions sandwiching the first portion, and the first portion has a higher energy of a conduction band than that of the second portion, and includes a doped portion doped with an n-type impurity and undoped portions that sandwich the doped portion and are not doped with an impurity.