IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9786741 B1

PDFFull Text
Date of Patent:
Oct. 10, 2017

Filed:

Jun. 13, 2014

Silicon carbide semiconductor device and method for manufacturing the same

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Takeyoshi Masuda, Osaka, JP;

Taku Horii, Osaka, JP;

Ryosuke Kubota, Osaka, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Laura G. Remus

Primary Examiner:

Victor A Mandala

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02529 (2013.01); H01L 21/0465 (2013.01); H01L 29/086 (2013.01); H01L 29/0865 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/1095 (2013.01); H01L 29/66068 (2013.01); H01L 29/66333 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract

A silicon carbide semiconductor device includes a silicon carbide layer and a gate insulating layer. The silicon carbide layer has a main surface. The gate insulating layer is arranged as being in contact with the main surface of the silicon carbide layer. The silicon carbide layer includes a drift region having a first conductivity type, a body region having a second conductivity type different from the first conductivity type and being in contact with the drift region, a source region having the first conductivity type and arranged as being spaced apart from the drift region by the body region, and a protruding region arranged to protrude from at least one side of the source region and the drift region into the body region, being in contact with the gate insulating layer, and having the first conductivity type.

Find Patent Forward Citations

Loading…