The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Mar. 26, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans-Joachim Barth, Munich, DE;

Helmut Horst Tews, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); G06F 17/50 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); G06F 17/5068 (2013.01); H01L 21/76897 (2013.01); H01L 22/14 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 27/0611 (2013.01); H01L 27/0805 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Structures and methods of forming moisture barrier capacitor on a semiconductor component are disclosed. The capacitor is located on the periphery of a semiconductor chip and includes an inner plate electrically connected to a voltage node, an outer plate with fins for electrically connecting to a different voltage node.


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