The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Apr. 11, 2016
Canon Kabushiki Kaisha, Tokyo, JP;
Koichi Tazoe, Sagamihara, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing a photoelectric conversion device includes forming a wiring structure above a semiconductor substrate including a photoelectric converter, forming, by a plasma CVD method, a first insulating film which contains hydrogen, above an uppermost wiring layer in the wiring structure, performing, after formation of the first insulating film, first annealing in a hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, and the first insulating film, forming a second insulating film above the first insulating film after the first annealing, and performing, after formation of the second insulating film, second annealing in the hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, the first insulating film, and the second insulating film.